类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 输出的数量 | 资历状况 | 输出类型 | 最大输出电流 | 输入电压-Nom | 配置 | 通道数量 | 模拟 IC - 其他类型 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 最大输出电压 | 最小输入电压 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 最大输入电压 | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 控制技术 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 切换器配置 | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | FDZ1905PZ | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 46 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | 6-UFBGA, WLCSP | 6 | 54mg | SILICON | 2 | 143 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2016 | PowerTrench® | e1 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 900mW | BOTTOM | BALL | 增强型MOSFET | 1.5W | 12 ns | 2 P-Channel (Dual) | SWITCHING | 126m Ω @ 1A, 4.5V | 1V @ 250μA | 36ns | -20V | 36 ns | -3A | 8V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 650μm | 1mm | 1.5mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMG9926UDM-7 | Diodes Incorporated | 数据表 | 385 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 | 6 | SILICON | 2 | 40.4 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 980mW | 鸥翼 | 260 | 40 | DMG9926UDM | 6 | 增强型MOSFET | 980mW | 8.4 ns | 2 N-Channel (Dual) Common Drain | SWITCHING | 28m Ω @ 8.2A, 4.5V | 900mV @ 250μA | 856pF @ 10V | 8.3nC @ 4.5V | 8.2ns | 20V | 8.9 ns | 4.2A | 8V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.3mm | 3.1mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
FDMA1027P | ON Semiconductor | 数据表 | 2344 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 表面贴装 | 6-VDFN Exposed Pad | 6 | 40mg | SILICON | 3A | 2 | 15 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 800mW | 无铅 | 未说明 | 未说明 | 不合格 | Dual | 增强型MOSFET | 1.4W | DRAIN | 9 ns | 2 P-Channel (Dual) | SWITCHING | 120m Ω @ 3A, 4.5V | 1.3V @ 250μA | 435pF @ 10V | 6nC @ 4.5V | 11ns | 20V | 11 ns | 2.2A | 8V | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 750μm | 2mm | 2mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN5L06DMK-7 | Diodes Incorporated | 数据表 | 300000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 | 6 | SILICON | 2 | -65°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 2.5Ohm | Matte Tin (Sn) | HIGH RELIABILITY | 50V | 400mW | 鸥翼 | 260 | 305mA | 40 | DMN5L06DMK | 6 | 不合格 | Dual | 增强型MOSFET | 400mW | 2 N-Channel (Dual) | SWITCHING | 2 Ω @ 50mA, 5V | 1V @ 250μA | 50pF @ 25V | 305mA | 20V | 0.305A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 5 pF | 1.1mm | 3mm | 1.6mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD87381PT | Texas Instruments | 数据表 | 50 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 3 days ago) | Gold | 表面贴装 | 表面贴装 | 5-LGA | 5 | 16.8 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e4 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | 4W | UNSPECIFIED | UNSPECIFIED | 260 | 1 | 未说明 | CSD87381 | 1 | 可调式 | 15A | 12V | 2 | 开关稳压器 | Dual | 7.9 ns | 1.3V | -800mV | 2 N-Channel (Half Bridge) | 16.3m Ω @ 8A, 8V | 24V | 1.9V @ 250μA | 脉宽调制 | 564pF @ 15V | 5nC @ 4.5V | 16.3ns | 30V | 2.9 ns | BUCK | 15A | 10V | 逻辑电平门 | 480μm | 3mm | 2.5mm | 400μm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | DMP6050SSD-13 | Diodes Incorporated | 数据表 | 600000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1.2W | 鸥翼 | 未说明 | 未说明 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1.2W | 2 P-Channel (Dual) | SWITCHING | 55m Ω @ 5A, 10V | 3V @ 250μA | 1293pF @ 30V | 24nC @ 10V | 60V | 4.8A | 0.055Ohm | 60V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | TC7920K6-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | Tin | 表面贴装 | 表面贴装 | 12-VFDFN Exposed Pad | 12 | SILICON | 4 | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | e4 | 活跃 | 1 (Unlimited) | 12 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD | DUAL | 无铅 | 260 | 40 | 不合格 | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 增强型MOSFET | 10 ns | 2 N and 2 P-Channel | SWITCHING | 10 Ω @ 1A, 10V | 2.4V @ 1mA | 52pF @ 25V | 15ns | 200V | N-CHANNEL AND P-CHANNEL | 15 ns | 7Ohm | 200V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AON7934 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 13A 15A | -55°C~150°C TJ | Digi-Reel® | 2011 | Discontinued | 1 (Unlimited) | 2.5W | 增强型MOSFET | 2 N-Channel (Half Bridge) | 10.2m Ω @ 13A, 10V | 2.2V @ 250μA | 485pF @ 15V | 11nC @ 10V | 30V | 15A | 18A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SP8K2FU6TB | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 150°C TJ | Tape & Reel (TR) | 2004 | Obsolete | 1 (Unlimited) | EAR99 | 2W | *K2 | 增强型MOSFET | 2W | 2 N-Channel (Dual) | 30m Ω @ 6A, 10V | 2.5V @ 1mA | 520pF @ 10V | 10.1nC @ 5V | 30V | 6A | 2.5V | 6A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMC3021LK4-13 | Diodes Incorporated | 数据表 | 256 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 5 | 3.949996g | SILICON | 9.4A 6.8A | 2 | 19 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 2.7W | SINGLE | 鸥翼 | 260 | 40 | DMC3021 | 4 | R-PSSO-G4 | 2 | 增强型MOSFET | 2.5 ns | N and P-Channel, Common Drain | SWITCHING | 21m Ω @ 7A, 10V | 2.1V @ 250μA | 751pF @ 10V | 17.4nC @ 10V | 6.6ns | N-CHANNEL AND P-CHANNEL | 6.3 ns | 6.8A | 20V | 6.7A | 30V | 40A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN61D8LVTQ-7 | Diodes Incorporated | 数据表 | 72000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 820mW | 未说明 | 未说明 | 820mW | 2 N-Channel (Dual) | 1.8 Ω @ 150mA, 5V | 2V @ 1mA | 12.9pF @ 12V | 0.74nC @ 5V | 60V | 630mA | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD75301W1015 | Texas Instruments | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 6-UFBGA, DSBGA | 6 | SILICON | 2 | 38 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e1 | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 800mW | BOTTOM | BALL | 260 | CSD75301 | 6 | 增强型MOSFET | 800mW | 3 ns | 2 P-Channel (Dual) | SWITCHING | 100m Ω @ 1A, 4.5V | 1V @ 250μA | 195pF @ 10V | 2.1nC @ 4.5V | 1.7ns | 20V | 16 ns | 1.2A | -700mV | 8V | 0.19Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -700 mV | 31 pF | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMG9933USD-13 | Diodes Incorporated | 数据表 | 836 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 2 | 46.52 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 1.15W | 鸥翼 | 260 | 40 | 8 | 2 | 增强型MOSFET | 12.45 ns | 2 P-Channel (Dual) | SWITCHING | 75m Ω @ 4.8A, 4.5V | 1.1V @ 250μA | 608.4pF @ 6V | 6.5nC @ 4.5V | 10.29ns | 20V | 22.19 ns | 4.6A | 12V | 0.075Ohm | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD87312Q3E | Texas Instruments | 数据表 | 2500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 3 days ago) | Gold | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 2 | 17 ns | -55°C~150°C TJ | Cut Tape (CT) | NexFET™ | e4 | yes | 活跃 | 1 (Unlimited) | 7 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 2.5W | 无铅 | 260 | not_compliant | 未说明 | CSD87312 | Dual | 增强型MOSFET | 2.5W | 7.8 ns | 2 N-Channel (Dual) Common Source | SWITCHING | 33m Ω @ 7A , 8V | 1.3V @ 250μA | 1250pF @ 15V | 8.2nC @ 4.5V | 16ns | 30V | 2.8 ns | 27A | 10V | 30V | 45A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 16 pF | 3.3mm | 3.3mm | 900μm | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||
FDMS3602S | ON Semiconductor | 数据表 | 72 In Stock | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | 90mg | SILICON | 15A 26A | 2 | 31 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 5.6MOhm | Tin (Sn) | 1W | R-PDSO-N6 | 增强型MOSFET | 2.5W | 排水源头 | 2 N-Channel (Dual) | SWITCHING | 5.6m Ω @ 15A, 10V | 3V @ 250μA | 1680pF @ 13V | 27nC @ 10V | 4.2ns | 3.2 ns | 26A | 20V | 15A | 25V | 40A | 50 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.8 V | 1.05mm | 5mm | 6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
US6J11TR | ROHM Semiconductor | 数据表 | 3000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 6-SMD, Flat Leads | 6 | SILICON | 30 ns | 2 | 150°C TJ | Tape & Reel (TR) | 2012 | e2 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin/Copper (Sn/Cu) | 1W | 260 | 10 | *J11 | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 8 ns | 320mW | 2 P-Channel (Dual) | SWITCHING | 260m Ω @ 1.3A, 4.5V | 1V @ 1mA | 290pF @ 6V | 2.4nC @ 4.5V | 10ns | 12V | 9 ns | 1.3A | 10V | 0.0013A | 12V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN32D4SDW-7 | Diodes Incorporated | 数据表 | 44 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 290mW | 260 | 30 | 290mW | 2 N-Channel (Dual) | 400m Ω @ 250mA, 10V | 1.6V @ 250μA | 50pF @ 15V | 1.3nC @ 10V | 30V | 650mA | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVMFD5C478NLWFT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 48 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 8-PowerTDFN | 10.5A Ta 29A Tc | -55°C~175°C TJ | Tape & Reel (TR) | e3 | yes | 活跃 | Tin (Sn) | 未说明 | 未说明 | 3.1W Ta 23W Tc | 2 N-Channel (Dual) | 14.5m Ω @ 7.5A, 10V | 2.2V @ 20μA | 420pF @ 25V | 8.1nC @ 10V | 40V | Standard | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSC0925NDATMA1 | Infineon Technologies | 数据表 | 25 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 2 | 17 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | OptiMOS™ | e3 | no | 活跃 | 1 (Unlimited) | 6 | EAR99 | 2.5W | FLAT | 未说明 | not_compliant | 未说明 | 8 | R-PDSO-F6 | 增强型MOSFET | 2.5W | 排水源头 | 4.7 ns | 2 N Channel (Dual Buck Chopper) | SWITCHING | 5m Ω @ 20A, 10V | 2V @ 250μA | 无卤素 | 1157pF @ 15V | 17nC @ 10V | 3.8ns | 30V | 3 ns | 15A | 20V | 11A | 0.007Ohm | 160A | 30V | 14 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMC3021LSDQ-13 | Diodes Incorporated | 数据表 | 50000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | 8.5A 7A | 50.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 2.5W | 未说明 | 未说明 | 2 | 10.1 ns | N and P-Channel | 21m Ω @ 7A, 10V | 2.1V @ 250μA | 767pF @ 10V | 16.1nC @ 10V | 6.5ns | 30V | 22.2 ns | 7A | 20V | -30V | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EFC6612R-TF | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 6-SMD, No Lead | 6 | 11.8 ns | 150°C TJ | Tape & Reel (TR) | 1998 | yes | 不用于新设计 | 1 (Unlimited) | EAR99 | 2.5W | 30 ns | 2 N-Channel (Dual) Common Drain | 27nC @ 4.5V | 640ns | 92 ns | 23A | 12V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 2.5V Drive | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN2990UDJ-7 | Diodes Incorporated | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | Tin | 表面贴装 | 表面贴装 | SOT-963 | 6 | SILICON | 2 | 19 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | HIGH RELIABILITY | 350mW | FLAT | 260 | 40 | 6 | Dual | 增强型MOSFET | 350mW | 4 ns | 2 N-Channel (Dual) | SWITCHING | 990m Ω @ 100mA, 4.5V | 1V @ 250μA | 27.6pF @ 16V | 0.5nC @ 4.5V | 3.3ns | 20V | 6.4 ns | 450mA | 8V | 0.33A | 0.99Ohm | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN601DMK-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 | 6 | SILICON | 2 | 15.7 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | LOW CAPACITANCE | 60V | 700mW | 鸥翼 | 260 | 305mA | 40 | DMN601DMK | 6 | Dual | 增强型MOSFET | 980mW | 3.9 ns | 2 N-Channel (Dual) | SWITCHING | 2.4 Ω @ 200mA, 10V | 2.5V @ 1mA | 50pF @ 25V | 304nC @ 4.5V | 3.4ns | 9.9 ns | 510mA | 20V | 0.305A | 4Ohm | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 5 pF | 1.1mm | 3mm | 1.6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
FDC6302P | ON Semiconductor | 数据表 | 3000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 120mA | 2 | 9 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | Tin (Sn) | -25V | 900mW | 鸥翼 | -120mA | Dual | 增强型MOSFET | 900mW | 5 ns | 700mW | 2 P-Channel (Dual) | SWITCHING | 10 Ω @ 200mA, 4.5V | 1.5V @ 250μA | 11pF @ 10V | 0.31nC @ 4.5V | 8ns | 25V | 5 ns | -120mA | -1V | 8V | -25V | -25V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -1 V | 1.12mm | 3mm | 1.68mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | BUK9K25-40EX | Nexperia USA Inc. | 数据表 | 3106500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-1205, 8-LFPAK56 | 8 | LFPAK56D | 18.2A | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | TrenchMOS™ | 活跃 | 1 (Unlimited) | 175°C | -55°C | 32W | 32W | 2 N-Channel (Dual) | 24mOhm @ 5A, 10V | 2.1V @ 1mA | 701pF @ 25V | 6.3nC @ 5V | 40V | 18.2A | 701pF | 逻辑电平门 | 19mOhm | 24 mΩ | ROHS3 Compliant |
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